IndiumV3, Main, Repository, bibRecord, 000658

Pressure-dependent shallow donor binding energy in InGaN/GaN square QWWs

Identifieur interne : 000658 ( Main/Repository ); précédent : 000657; suivant : 000659

Pressure-dependent shallow donor binding energy in InGaN/GaN square QWWs

Auteurs : RBID : Pascal:13-0082833

Descripteurs français

Pascal (Inist)
- Effet pression, Forme carrée, Centre donneur, Energie liaison, Méthode variationnelle, Pression hydrostatique, Etat fondamental, Impureté peu profonde, Etat impureté, Masse effective, Barrière potentiel, Constante diélectrique efficace, Gallium Indium Nitrure Mixte, Nitrure d'indium, Ion hydrogénoïde, Fil quantique, InGaN, GaN.

English descriptors

KwdEn :
- Binding energy, Donor center, Effective dielectric constant, Effective mass, Gallium Indium Nitrides Mixed, Ground states, H-like ions, Hydrostatic pressure, Impurity states, Indium nitride, Potential barrier, Pressure effects, Quantum wires, Shallow impurities, Square shape, Variational methods.

Abstract

Using a variational approach, we perform a theoretical study of hydrostatic pressure effect on the ground-state of axial hydrogenic shallow-donor impurity binding energy in InGaN/GaN square quantum well wire (SQWWs) as a function of the side length within the effective-mass scheme and finite potential barrier. The pressure dependence of wire length, effective mass, dielectric constant and potential barrier are taken into account. Numerical results show that: (i) the binding energy is strongly affected by the wire length and the external applied pressure and (ii) its maximum moves to the narrow wire in particular for height pressure.

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Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Pressure-dependent shallow donor binding energy in InGaN/GaN square QWWs</title>
<author><name sortKey="El Ghazi, Haddou" uniqKey="El Ghazi H">Haddou El Ghazi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>LPS, Faculty of Sciences, Dhar EL Mehrez, B.P</s1>
<s2>1796 Atlas Fez</s2>
<s3>MAR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Maroc</country>
<wicri:noRegion>1796 Atlas Fez</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Specials Mathematics, CPGE Kénitra, Street Chakib Arsalane</s1>
<s2>Kénitra</s2>
<s3>MAR</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Maroc</country>
<wicri:noRegion>Kénitra</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Jorio, Anouar" uniqKey="Jorio A">Anouar Jorio</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>LPS, Faculty of Sciences, Dhar EL Mehrez, B.P</s1>
<s2>1796 Atlas Fez</s2>
<s3>MAR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Maroc</country>
<wicri:noRegion>1796 Atlas Fez</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Zorkani, Izeddine" uniqKey="Zorkani I">Izeddine Zorkani</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>LPS, Faculty of Sciences, Dhar EL Mehrez, B.P</s1>
<s2>1796 Atlas Fez</s2>
<s3>MAR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Maroc</country>
<wicri:noRegion>1796 Atlas Fez</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0082833</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0082833 INIST</idno>
<idno type="RBID">Pascal:13-0082833</idno>
<idno type="wicri:Area/Main/Corpus">001271</idno>
<idno type="wicri:Area/Main/Repository">000658</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0921-4526</idno>
<title level="j" type="abbreviated">Physica, B Condens. matter</title>
<title level="j" type="main">Physica. B, Condensed matter</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binding energy</term>
<term>Donor center</term>
<term>Effective dielectric constant</term>
<term>Effective mass</term>
<term>Gallium Indium Nitrides Mixed</term>
<term>Ground states</term>
<term>H-like ions</term>
<term>Hydrostatic pressure</term>
<term>Impurity states</term>
<term>Indium nitride</term>
<term>Potential barrier</term>
<term>Pressure effects</term>
<term>Quantum wires</term>
<term>Shallow impurities</term>
<term>Square shape</term>
<term>Variational methods</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Effet pression</term>
<term>Forme carrée</term>
<term>Centre donneur</term>
<term>Energie liaison</term>
<term>Méthode variationnelle</term>
<term>Pression hydrostatique</term>
<term>Etat fondamental</term>
<term>Impureté peu profonde</term>
<term>Etat impureté</term>
<term>Masse effective</term>
<term>Barrière potentiel</term>
<term>Constante diélectrique efficace</term>
<term>Gallium Indium Nitrure Mixte</term>
<term>Nitrure d'indium</term>
<term>Ion hydrogénoïde</term>
<term>Fil quantique</term>
<term>InGaN</term>
<term>GaN</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Using a variational approach, we perform a theoretical study of hydrostatic pressure effect on the ground-state of axial hydrogenic shallow-donor impurity binding energy in InGaN/GaN square quantum well wire (SQWWs) as a function of the side length within the effective-mass scheme and finite potential barrier. The pressure dependence of wire length, effective mass, dielectric constant and potential barrier are taken into account. Numerical results show that: (i) the binding energy is strongly affected by the wire length and the external applied pressure and (ii) its maximum moves to the narrow wire in particular for height pressure.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0921-4526</s0>
</fA01>
<fA03 i2="1"><s0>Physica, B Condens. matter</s0>
</fA03>
<fA05><s2>410</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>Pressure-dependent shallow donor binding energy in InGaN/GaN square QWWs</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>EL GHAZI (Haddou)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>JORIO (Anouar)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>ZORKANI (Izeddine)</s1>
</fA11>
<fA14 i1="01"><s1>LPS, Faculty of Sciences, Dhar EL Mehrez, B.P</s1>
<s2>1796 Atlas Fez</s2>
<s3>MAR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Specials Mathematics, CPGE Kénitra, Street Chakib Arsalane</s1>
<s2>Kénitra</s2>
<s3>MAR</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA20><s1>49-52</s1>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>145B</s2>
<s5>354000506279680090</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>22 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0082833</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Physica. B, Condensed matter</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Using a variational approach, we perform a theoretical study of hydrostatic pressure effect on the ground-state of axial hydrogenic shallow-donor impurity binding energy in InGaN/GaN square quantum well wire (SQWWs) as a function of the side length within the effective-mass scheme and finite potential barrier. The pressure dependence of wire length, effective mass, dielectric constant and potential barrier are taken into account. Numerical results show that: (i) the binding energy is strongly affected by the wire length and the external applied pressure and (ii) its maximum moves to the narrow wire in particular for height pressure.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70C21H</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Effet pression</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Pressure effects</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Forme carrée</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Square shape</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Forma cuadrada</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Centre donneur</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Donor center</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Centro dador</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Energie liaison</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Binding energy</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Méthode variationnelle</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Variational methods</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Pression hydrostatique</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Hydrostatic pressure</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Etat fondamental</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Ground states</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Impureté peu profonde</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Shallow impurities</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Impureza poco profunda</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Etat impureté</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Impurity states</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Masse effective</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Effective mass</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Barrière potentiel</s0>
<s5>12</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Potential barrier</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Constante diélectrique efficace</s0>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Effective dielectric constant</s0>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Constante dieléctrica efectiva</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Gallium Indium Nitrure Mixte</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>14</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Gallium Indium Nitrides Mixed</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>14</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Mixto</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Nitrure d'indium</s0>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Indium nitride</s0>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Indio nitruro</s0>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Ion hydrogénoïde</s0>
<s5>17</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>H-like ions</s0>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Fil quantique</s0>
<s5>18</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Quantum wires</s0>
<s5>18</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>InGaN</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>GaN</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fN21><s1>056</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Pressure-dependent shallow donor binding energy in InGaN/GaN square QWWs

Pressure-dependent shallow donor binding energy in InGaN/GaN square QWWs

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

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